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Source/Drain Engineering of Nanoscale Germanium-based MOS Devices

Bag om Source/Drain Engineering of Nanoscale Germanium-based MOS Devices

This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600¿ and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10¿7¿¿cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.

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  • Sprog:
  • Engelsk
  • ISBN:
  • 9783662496817
  • Indbinding:
  • Hardback
  • Sideantal:
  • 59
  • Udgivet:
  • 24. marts 2016
  • Udgave:
  • 12016
  • Størrelse:
  • 235x155x12 mm.
  • Vægt:
  • 299 g.
Leveringstid: 2-3 uger
Forventet levering: 2. december 2024

Beskrivelse af Source/Drain Engineering of Nanoscale Germanium-based MOS Devices

This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600¿ and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10¿7¿¿cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.

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