Source/Drain Engineering of Nanoscale Germanium-based MOS Devices
indgår i Springer Theses serien
- Indbinding:
- Hardback
- Sideantal:
- 59
- Udgivet:
- 24. marts 2016
- Udgave:
- 12016
- Størrelse:
- 235x155x12 mm.
- Vægt:
- 299 g.
Leveringstid:
2-3 uger
Forventet levering: 2. december 2024
Beskrivelse af Source/Drain Engineering of Nanoscale Germanium-based MOS Devices
This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600¿ and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10¿7¿¿cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.
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