Bøger i Computational Microelectronics serien

Despite the resulting progress in device optimization, the above approach fails to provide a required compact set of device design and process control rules and a compact circuit model for the analysis of large-scale electronic designs.

To me personally the most fascinating aspect of mathematical device analysis is that an interplay of abstract mathematics, perturbation theory, numerical analysis and device physics is prompting the design and development of new technology.

Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). After working over 15 years in the field of semiconductor device modeling, I have felt the need for a book which can fill the gap between the theory and the practice of MOS transistor modeling.

The topic of this monograph is the physical modeling of heterostructure devices.

This book covers modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is explored in devices using analytical k.p and numerical pseudopotential methods. Includes a rigorous overview of transport modeling.

This book, the first comprehensive description of the numerical methods, covers every aspect of the Boltzmann transport equation, including transport in bulk and in inversion layers. It analyzes the issues of stabilization and band structure mapping in detail.

This volume presents the application of the Monte Carlo method to the simulation of semiconductor devices, reviewing the physics of transport in semiconductors, followed by an introduction to the physics of semiconductor devices.

This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon.

Computer-aided-design (CAD) of semiconductor microtransducers is relatively new in contrast to their counterparts in the integrated circuit world. Integrated silicon microtransducers are realized using microfabrication techniques similar to those for standard integrated circuits (ICs).

This book contains a comprehensive review of the physics, modelling and simulation of electron transport at interfaces in semiconductor devices. It combines a review of existing interface charge transport models with original developments, and introduces a unified representation of charge transport at semiconductor interfaces.

To be perfect does not mean that there is nothing to add, but rather there is nothing to take away Antoine de Saint-Exupery The drift-diffusion approximation has served for more than two decades as the cornerstone for the numerical simulation of semiconductor devices.

It was about 1985 when both of the authors started their work using multigrid methods for process simulation problems. There are the three "classical" ones, from our point of view: the so-called "1984 Guide" [12J by Brandt, the "Multi-Grid Methods and Applications" [49J by Hackbusch and the so-called "Fundamentals" [132J by Stiiben and Trottenberg.

Because the formalism enables rigorous modeling of different scattering mechanisms in terms of self-energies, but an exact evaluation of self-energies for realistic systems is not possible, their approximation and inclusion in the quantum kinetic equations of the Green functions are elaborated.

From the reviews: "... this is a well produced book, written in a easy to read style, and will also be a very useful primer for someone starting out the field [...], and a useful source of reference for experienced users ..." Microelectronics Journal