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Strain-Induced Effects in Advanced MOSFETs

af Viktor Sverdlov

indgår i Computational Microelectronics serien

Strain-Induced Effects in Advanced MOSFETs af Viktor Sverdlov
Bag om Strain-Induced Effects in Advanced MOSFETs

Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. A rigorous overview of transport modeling in strained devices is given.

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  • Sprog:
  • Engelsk
  • ISBN:
  • 9783709103814
  • Indbinding:
  • Hardback
  • Sideantal:
  • 252
  • Udgivet:
  • 23. November 2010
  • Udgave:
  • 2011
  • Størrelse:
  • 244x170x15 mm.
  • Vægt:
  • 631 g.
Leveringstid: 2-3 uger
Forventet levering: 9. Oktober 2024

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Beskrivelse af Strain-Induced Effects in Advanced MOSFETs

Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. A rigorous overview of transport modeling in strained devices is given.

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