Strain-Induced Effects in Advanced MOSFETs
- Indbinding:
- Hardback
- Sideantal:
- 252
- Udgivet:
- 23. november 2010
- Udgave:
- 2011
- Størrelse:
- 244x170x15 mm.
- Vægt:
- 631 g.
Leveringstid:
8-11 hverdage
Forventet levering: 20. november 2024
Beskrivelse af Strain-Induced Effects in Advanced MOSFETs
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. A rigorous overview of transport modeling in strained devices is given.
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