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  4. Through-Silicon Vias in SiGe BiCMOS and Interposer Technologies for Sub-THz Applications

Through-Silicon Vias in SiGe BiCMOS and Interposer Technologies for Sub-THz Applications

af Matthias Wietstruck
Through-Silicon Vias in SiGe BiCMOS and Interposer Technologies for Sub-THz Applications af Matthias Wietstruck
Bag om Through-Silicon Vias in SiGe BiCMOS and Interposer Technologies for Sub-THz Applications

In the dissertation "Through-Silicon Vias in SiGe BiCMOS and Interposer Technologies for sub-THz Applications", a through-silicon via (TSV) technology module is developed targeting high frequency packaging applications in the millimeter-wave and sub-THz frequency range. Based on a high-performance 130 nm SiGe BiCMOS technology, TSVs are embedded in a via-middle integration approach. The TSV process module consists of the TSV integration, a carrier wafer handling and a wafer backside process to realize a redistribution layer. A process flow was developed to realize TSV structures with various geometries to ensure a high TSV design flexibility. The TSV process module can be applied for SiGe BiCMOS as well as for interposer technologies. High-performance TSV interconnections have been simulated to optimize their electrical properties. TSVs were electrically characterized and 3D transitions with low insertion loss

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  • Sprog:
  • Engelsk
  • ISBN:
  • 9783961001965
  • Indbinding:
  • Paperback
  • Sideantal:
  • 212
  • Udgivet:
  • 30. november 2023
  • Størrelse:
  • 148x14x210 mm.
  • Vægt:
  • 314 g.
  • 2-3 uger.
  • 16. december 2024
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Forlænget returret til d. 31. januar 2025

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Beskrivelse af Through-Silicon Vias in SiGe BiCMOS and Interposer Technologies for Sub-THz Applications

In the dissertation "Through-Silicon Vias in SiGe BiCMOS and Interposer Technologies for sub-THz Applications", a through-silicon via (TSV) technology module is developed targeting high frequency packaging applications in the millimeter-wave and sub-THz frequency range.
Based on a high-performance 130 nm SiGe BiCMOS technology, TSVs are embedded in a via-middle integration approach. The TSV process module consists of the TSV integration, a carrier wafer handling and a wafer backside process to realize a redistribution layer. A process flow was developed to realize TSV structures with various geometries to ensure a high TSV design flexibility. The TSV process module can be applied for SiGe BiCMOS as well as for interposer technologies.
High-performance TSV interconnections have been simulated to optimize their electrical properties. TSVs were electrically characterized and 3D transitions with low insertion loss

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