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Strained-Si Heterostructure Field Effect Devices

Bag om Strained-Si Heterostructure Field Effect Devices

Brings together materials science, manufacturing processes, and research and developments of SiGe and strained-Si. This book contains the information on strain engineering in silicon CMOS and strained-Si-based integrated circuit technology and strain-engineered MOSFETs. It presents various aspects of silicon heterostructure materials and devices.

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  • Sprog:
  • Engelsk
  • ISBN:
  • 9780750309936
  • Indbinding:
  • Hardback
  • Sideantal:
  • 436
  • Udgivet:
  • 11. januar 2007
  • Størrelse:
  • 156x234x28 mm.
  • Vægt:
  • 735 g.
  • Ukendt - mangler pt..

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- 1 valgfrit digitalt ugeblad
- 20 timers lytning og læsning
- Adgang til 70.000+ titler
- Ingen binding

Abonnementet koster 75 kr./md.
Ingen binding og kan opsiges når som helst.

Beskrivelse af Strained-Si Heterostructure Field Effect Devices

Brings together materials science, manufacturing processes, and research and developments of SiGe and strained-Si. This book contains the information on strain engineering in silicon CMOS and strained-Si-based integrated circuit technology and strain-engineered MOSFETs. It presents various aspects of silicon heterostructure materials and devices.

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