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  4. Physics And Modeling Of Mosfets, The: Surface-potential Model Hisim

Physics And Modeling Of Mosfets, The: Surface-potential Model Hisim

af Tatsuya (Hiroshima Univ Ezaki

indgår i International Series On Advances In Solid State Electronics And Technology serien

Physics And Modeling Of Mosfets, The: Surface-potential Model Hisim af Tatsuya (Hiroshima Univ Ezaki
Bag om Physics And Modeling Of Mosfets, The: Surface-potential Model Hisim

Provides a description of the compact MOS transistor models for circuit simulation. This book considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.

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  • Sprog:
  • Engelsk
  • ISBN:
  • 9789812568649
  • Indbinding:
  • Hardback
  • Sideantal:
  • 380
  • Udgivet:
  • 5. juni 2008
  • Størrelse:
  • 157x223x22 mm.
  • Vægt:
  • 508 g.
  • Ukendt - mangler pt..

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Provides a description of the compact MOS transistor models for circuit simulation. This book considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.

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