Multi-Gigahertz Nyquist Analog-to-Digital Converters
- Indbinding:
- Paperback
- Sideantal:
- 296
- Udgivet:
- 14. januar 2024
- Udgave:
- 24001
- Størrelse:
- 155x17x235 mm.
- Vægt:
- 452 g.
- 8-11 hverdage.
- 6. december 2024
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- 1 valgfrit digitalt ugeblad
- 20 timers lytning og læsning
- Adgang til 70.000+ titler
- Ingen binding
Abonnementet koster 75 kr./md.
Ingen binding og kan opsiges når som helst.
Beskrivelse af Multi-Gigahertz Nyquist Analog-to-Digital Converters
This book proposes innovative circuit, architecture, and system solutions in deep-scaled CMOS and FinFET technologies, which address the challenges in maximizing the accuracy*speed/power of multi-GHz sample rate and bandwidth Analog-to-Digital Converters (ADC)s. A new holistic approach is introduced that first identifies the major error sources of a converter¿ building blocks, and quantitatively analyzes their impact on the overall performance, establishing the fundamental circuit-imposed accuracy ¿ speed ¿ power limits. The analysis extends to the architecture level, by introducing a mathematical framework to estimate and compare the accuracy ¿ speed ¿ power limits of several ADC architectures and variants. To gain system-level insight, time-interleaving is covered in detail, and a framework is also introduced to compare key metrics of interleaver architectures quantitatively. The impact of technology is also considered by adding process effects from several deep-scaled CMOS technologies.
The validity of the introduced analytical approach and the feasibility of the proposed concepts are demonstrated by four silicon prototype Integrated Circuits (IC)s, realized in ultra-deep-scaled CMOS and FinFET technologies.
Introduces a new, holistic approach for the analysis and design of high-performance ADCs in deep-scaled CMOS technologies, from theoretical concepts to silicon bring-up and verification;
Describes novel methods and techniques to push the accuracy ¿ speed ¿ power boundaries of multi-GHz ADCs, analyzing core and peripheral circuits¿ trade-offs across the entire ADC chain;
Supports the introduced analysis and design concepts by four state-of-the-art silicon prototype ICs, implemented in 28nm bulk CMOS and 16nm FinFET technologies;
Provides a useful reference and a valuable tool for beginners as well as experienced ADC design engineers.
The validity of the introduced analytical approach and the feasibility of the proposed concepts are demonstrated by four silicon prototype Integrated Circuits (IC)s, realized in ultra-deep-scaled CMOS and FinFET technologies.
Introduces a new, holistic approach for the analysis and design of high-performance ADCs in deep-scaled CMOS technologies, from theoretical concepts to silicon bring-up and verification;
Describes novel methods and techniques to push the accuracy ¿ speed ¿ power boundaries of multi-GHz ADCs, analyzing core and peripheral circuits¿ trade-offs across the entire ADC chain;
Supports the introduced analysis and design concepts by four state-of-the-art silicon prototype ICs, implemented in 28nm bulk CMOS and 16nm FinFET technologies;
Provides a useful reference and a valuable tool for beginners as well as experienced ADC design engineers.
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