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High-K Dielectric MOSFETs Propelling Technological Evolution

High-K Dielectric MOSFETs Propelling Technological Evolutionaf Acharya Puja
Bag om High-K Dielectric MOSFETs Propelling Technological Evolution

Advances in high-k fabrication technology have enabled tremendous rates of progress in the microelectronics industry by both improving the performance of individual transistors and allowing more transistors to be integrated onto a chip. In years to come, MOS with high-k might be the one changing the scenarios on how small transistors can be made. Hence studies on this device should continue with intensive experimentation. The impact of high-k dielectric (TiO2) is also observed on NMOS transistor. The sub-threshold leakage current is found to be decreased with increasing threshold voltage; this reduces the power consumption and thus improves the NMOS transistor performance. The reduction in gate leakage and sub-threshold swing projects the high-k NMOS structure to be a strong alternative for future Nanoscale MOS devices. It can also be concluded from the analysis that as devices are scaled down, the threshold voltage decreases.

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  • Sprog:
  • Engelsk
  • ISBN:
  • 9786207452934
  • Indbinding:
  • Paperback
  • Sideantal:
  • 76
  • Udgivet:
  • 18. december 2023
  • Størrelse:
  • 150x5x220 mm.
  • Vægt:
  • 131 g.
  • 2-3 uger.
  • 2. december 2024
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Advances in high-k fabrication technology have enabled tremendous rates of progress in the microelectronics industry by both improving the performance of individual transistors and allowing more transistors to be integrated onto a chip. In years to come, MOS with high-k might be the one changing the scenarios on how small transistors can be made. Hence studies on this device should continue with intensive experimentation. The impact of high-k dielectric (TiO2) is also observed on NMOS transistor. The sub-threshold leakage current is found to be decreased with increasing threshold voltage; this reduces the power consumption and thus improves the NMOS transistor performance. The reduction in gate leakage and sub-threshold swing projects the high-k NMOS structure to be a strong alternative for future Nanoscale MOS devices. It can also be concluded from the analysis that as devices are scaled down, the threshold voltage decreases.

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