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  4. Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method.

Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method.

af Ludwig Stockmeier
Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method. af Ludwig Stockmeier
Bag om Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method.

The growth of heavily n-type doped silicon by the Czochralski method is frequently accompanied by the formation of dislocations. These dislocations lead to a reduction of yield and have therefore to be prevented. In this dissertation the reason for the formation of the dislocations is analyzed in detail.

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  • Sprog:
  • Engelsk
  • ISBN:
  • 9783839613450
  • Indbinding:
  • Paperback
  • Sideantal:
  • 204
  • Udgivet:
  • 1. august 2018
  • Størrelse:
  • 148x210x11 mm.
  • 2-4 uger.
  • 5. december 2024

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The growth of heavily n-type doped silicon by the Czochralski method is frequently accompanied by the formation of dislocations. These dislocations lead to a reduction of yield and have therefore to be prevented. In this dissertation the reason for the formation of the dislocations is analyzed in detail.

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