Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method.
- Indbinding:
- Paperback
- Sideantal:
- 204
- Udgivet:
- 1. august 2018
- Størrelse:
- 148x210x11 mm.
- 2-4 uger.
- 19. december 2024
Forlænget returret til d. 31. januar 2025
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Beskrivelse af Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method.
The growth of heavily n-type doped silicon by the Czochralski method is frequently accompanied by the formation of dislocations. These dislocations lead to a reduction of yield and have therefore to be prevented. In this dissertation the reason for the formation of the dislocations is analyzed in detail.
Brugerbedømmelser af Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method.
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