De Aller-Bedste Bøger - over 12 mio. danske og engelske bøger
Levering: 1 - 2 hverdage

Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method.

Bag om Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method.

The growth of heavily n-type doped silicon by the Czochralski method is frequently accompanied by the formation of dislocations. These dislocations lead to a reduction of yield and have therefore to be prevented. In this dissertation the reason for the formation of the dislocations is analyzed in detail.

Vis mere
  • Sprog:
  • Engelsk
  • ISBN:
  • 9783839613450
  • Indbinding:
  • Paperback
  • Sideantal:
  • 204
  • Udgivet:
  • 1. august 2018
  • Størrelse:
  • 148x210x11 mm.
  • 2-4 uger.
  • 19. december 2024
Forlænget returret til d. 31. januar 2025

Normalpris

Abonnementspris

- Rabat på køb af fysiske bøger
- 1 valgfrit digitalt ugeblad
- 20 timers lytning og læsning
- Adgang til 70.000+ titler
- Ingen binding

Abonnementet koster 75 kr./md.
Ingen binding og kan opsiges når som helst.

Beskrivelse af Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method.

The growth of heavily n-type doped silicon by the Czochralski method is frequently accompanied by the formation of dislocations. These dislocations lead to a reduction of yield and have therefore to be prevented. In this dissertation the reason for the formation of the dislocations is analyzed in detail.

Brugerbedømmelser af Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method.



Find lignende bøger
Bogen Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method. findes i følgende kategorier: