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Fundamentals of Silicon Carbide Technology

- Growth, Characterization, Devices and Applications

af Tsunenobu (Kyoto University Kimoto

indgår i Wiley - IEEE serien

Fundamentals of Silicon Carbide Technology af Tsunenobu (Kyoto University Kimoto
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A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001.

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  • Sprog:
  • Engelsk
  • ISBN:
  • 9781118313527
  • Indbinding:
  • Hardback
  • Sideantal:
  • 400
  • Udgivet:
  • 21. november 2014
  • Størrelse:
  • 251x179x32 mm.
  • Vægt:
  • 1250 g.
  • 8-11 hverdage.
  • 17. januar 2025

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- Adgang til 70.000+ titler
- Ingen binding

Abonnementet koster 75 kr./md.
Ingen binding og kan opsiges når som helst.

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A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001.

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