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Electronic Properties of Doped Semiconductors

af B.I. Shklovskii, A.L. Efros

indgår i Springer Series in Solid-State Sciences serien

Electronic Properties of Doped Semiconductors af B.I. Shklovskii
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First-generation semiconductors could not be properly termed "doped- they were simply very impure. In the last fifteen years, however, there has been a noticeable shift towards impure semiconductors - a shift which came about because it is precisely the impurities that are essential to a number of major semiconductor devices.

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  • Sprog:
  • Engelsk
  • ISBN:
  • 9783662024058
  • Indbinding:
  • Paperback
  • Sideantal:
  • 388
  • Udgivet:
  • 1. august 1984
  • Udgave:
  • 11984
  • Størrelse:
  • 235x155x21 mm.
  • Vægt:
  • 623 g.
  • 8-11 hverdage.
  • 16. december 2024
Forlænget returret til d. 31. januar 2025

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Beskrivelse af Electronic Properties of Doped Semiconductors

First-generation semiconductors could not be properly termed "doped- they were simply very impure. In the last fifteen years, however, there has been a noticeable shift towards impure semiconductors - a shift which came about because it is precisely the impurities that are essential to a number of major semiconductor devices.

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