Bøger i Growth of Crystals serien

Papers from the Sixth All-Union Conference on Growth of Crystals comprise Volume 16 of this series. The articles were chosen with a view to more fully elucidate the basic problems of crystal growth as reflected in domestic and foreign reviews and in original studies. This volume consists of six parts. Part I is devoted to mechanisms of crystal growth that are important for production of materials with given properties. This part examines the temporal evolution of an inhomogeneous state and the array of semicellular and eutectic structures during microstructure formation, the effect of impurity on the nonequi­ librium vacancy concentration in a growing crystal, and the role of soluble and insoluble impurities in the birth and growth of crystals. Part II deals with the synthesis and electrophysical properties of novel solid electrolytes that are promis­ ing for practical use, analysis and correlation of the large amount of data on growth by the Bridgman-Stockbar­ ger method of single crystals of fluorite phases far from stoichiometry, and the hydrothermal chemistry and growth of hexagonal germanium dioxide.

Volume 19 includes articles on growth of crystals from the vapor, from the melt, and from fluxes, as well as a section on actual structure of crystals and films relative to growth conditions.

The present volume of this series, following the tradition of the previous volumes, covers three major lines of research on crystallization: growth from vapor and epitaxy, growth from solution, and growth from melt.

Part I, "Epitaxy and Transformations in Thin Films," stems from the current broad application of lasers and optical effects in general to crystal growth (in particular, the growth of thin films).

This 18th volume of the series includes invited papers from the Seventh All-Union Conference on the Growth of Crystals and the Symposium on Molecular-Beam Epitaxy that were held in Moscow in November, 1988.

Growth of Crystals, Volume 21 presents a survey, with detailed analysis, of the scientific and technological approaches, and results obtained, by leading Russian crystal growth specialists from the late 1990''s to date.The volume contains 16 reviewed chapters on various aspects of crystal and crystalline film growth from various phases (vapour, solution, liquid and solid). Both fundamental aspects, e.g. growth kinetics and mechanisms, and applied aspects, e.g. preparation of technically important materials in single-crystalline forms, are covered.A large portion of the volume is devoted to film growth, including film growth from eutectic melt, from amorphous solid state, kinetics of lateral epitaxy and film growth on specially structured substrates. An important chapter in this section covers heteroepitaxy of non-isovalent A3B5 semiconductor compounds, which have important applications in the field of photonics.The volume also includes a detailed analysis of the structural aspects of a broad range of laser crystals, information that is invaluable for successfully growing perfect, laser-effective, single crystals.

Part I, "Epitaxy and Transformations in Thin Films," stems from the current broad application of lasers and optical effects in general to crystal growth (in particular, the growth of thin films).

Growth of Crystals, Volume 21 presents a survey, with detailed analysis, of the scientific and technological approaches, and results obtained, by leading Russian crystal growth specialists from the late 1990's to date.The volume contains 16 reviewed chapters on various aspects of crystal and crystalline film growth from various phases (vapour, solution, liquid and solid). Both fundamental aspects, e.g. growth kinetics and mechanisms, and applied aspects, e.g. preparation of technically important materials in single-crystalline forms, are covered.A large portion of the volume is devoted to film growth, including film growth from eutectic melt, from amorphous solid state, kinetics of lateral epitaxy and film growth on specially structured substrates. An important chapter in this section covers heteroepitaxy of non-isovalent A3B5 semiconductor compounds, which have important applications in the field of photonics.The volume also includes a detailed analysis of the structural aspects of a broad range of laser crystals, information that is invaluable for successfully growing perfect, laser-effective, single crystals.