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Semiconductor Interfaces: Formation and Properties

- Proceedings of the Workkshop, Les Houches, France February 24-March 6, 1987

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(ii) Fine characterization down to the atomic scale using recently devel oped, powerful techniques such as scanning tunneling microscopy, high reso lution transmission electron microscopy, glancing incidence x-ray diffraction, x-ray standing waves, surface extended x-ray absorption fine structure and surface extended energy-loss fine structure.

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  • Sprog:
  • Engelsk
  • ISBN:
  • 9783642729690
  • Indbinding:
  • Paperback
  • Sideantal:
  • 389
  • Udgivet:
  • 6. december 2011
  • Udgave:
  • 11987
  • Størrelse:
  • 173x245x21 mm.
  • Vægt:
  • 662 g.
  • 8-11 hverdage.
  • 13. december 2024
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(ii) Fine characterization down to the atomic scale using recently devel oped, powerful techniques such as scanning tunneling microscopy, high reso lution transmission electron microscopy, glancing incidence x-ray diffraction, x-ray standing waves, surface extended x-ray absorption fine structure and surface extended energy-loss fine structure.

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