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  5. Characterization of Terahertz Emission from High Resistivity Fe-doped Bulk Ga0.69In0.31As Based Photoconducting Antennas

Characterization of Terahertz Emission from High Resistivity Fe-doped Bulk Ga0.69In0.31As Based Photoconducting Antennas

af Suranjana Sengupta

indgår i Springer Theses serien

Characterization of Terahertz Emission from High Resistivity Fe-doped Bulk Ga0.69In0.31As Based Photoconducting Antennas af Suranjana Sengupta
Bag om Characterization of Terahertz Emission from High Resistivity Fe-doped Bulk Ga0.69In0.31As Based Photoconducting Antennas

The high ultrafast carrier mobility, high resistivity, and subpicosecond carrier lifetime along with low bandgap make Ga0.69In0.31As an excellent candidate for PC antenna based THz emitter that can be photoexcited by compact Yb-based multiwatt laser systems for high power THz emission.

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  • Sprog:
  • Engelsk
  • ISBN:
  • 9781461428275
  • Indbinding:
  • Paperback
  • Sideantal:
  • 78
  • Udgivet:
  • 19. april 2013
  • Udgave:
  • 2011
  • Størrelse:
  • 235x155x4 mm.
  • Vægt:
  • 150 g.
  • 8-11 hverdage.
  • 6. december 2024

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The high ultrafast carrier mobility, high resistivity, and subpicosecond carrier lifetime along with low bandgap make Ga0.69In0.31As an excellent candidate for PC antenna based THz emitter that can be photoexcited by compact Yb-based multiwatt laser systems for high power THz emission.

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